2SB1218A -0.1a , -60v pnp silicon epitaxial paner transistors elektronische bauelemente 14-feb-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free applications ? general purpose amplification features ? high dc current gain ? complementary to 2sd1819a classification of h fe product-rank 2SB1218A-q 2SB1218A-r 2SB1218A-s range 160~260 210~340 290~460 marking bq1 br1 bs1 package information package mpq leadersize sot-323 3k 7? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -45 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -7 v collector current i c -100 ma collector power dissipation p c 150 mw thermal resistance from junction to ambient r ja 833 c / w junction & storage temperature t j , t stg 150, -55 ~ 150 c electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -45 - - v i c = -10 a, i e =0 collector-emitter breakdown voltage v (br)ceo -45 - - v i c = -2ma, i b =0 emitter-base breakdown voltage v (br)ebo -7 - - v i e = -10 a, i c =0 collector cut-off current i cbo - - -100 na v cb = -20v, i e =0 collector cut-off current i ceo - - -100 a v eb = -10v, i b =0 emitter cut-off current i ebo - - -100 na v eb = -5v, i c =0 dc current gain h fe 160 - 460 v ce = -10v, i c = -2ma collector-emitter saturation voltage v ce(sat) - - -0.5 v i c = -100ma, i b = -10ma transition frequency f t - 80 - mhz v ce = -10v, i e =1ma, f=200mhz collector output capacitance c ob - 2.7 - pf v cb = -10v, i e =0, f=1mhz sot-323 ref. millimeter ref. millimeter min. max. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40
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